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1 diffusion doping
nELECTRON dopado por difusión m -
2 diffusion
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3 base
12 nC&G of neck fondo mCHEM base fCINEMAT for injection moulding soporte mCOMP&DP base fGEOM pie m, base fINSTR soporte mMATH base fPHYS vibration test base fTELECOM base f
См. также в других словарях:
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
doping impurity diffusion — legiravimo priemaišų difuzija statusas T sritis radioelektronika atitikmenys: angl. doping impurity diffusion vok. Störstellendiffusion, f rus. диффузия легирующей примеси, f pranc. diffusion d impureté dopante, f … Radioelektronikos terminų žodynas
Diffusion transistor — A diffusion transistor is any transistor formed by diffusing dopants into a semiconductor substrate. Diffusion transistors include some types of both bipolar junction transistors and field effect transistors. The diffusion process was developed… … Wikipedia
doping diffusion source — priemaišų difuzijos šaltinis statusas T sritis radioelektronika atitikmenys: angl. diffusant source; doping diffusion source vok. Diffusantquelle, f; Diffusionsquelle, f rus. источник диффузанта, m pranc. source de diffusant, f … Radioelektronikos terminų žodynas
diffusion d'impureté dopante — legiravimo priemaišų difuzija statusas T sritis radioelektronika atitikmenys: angl. doping impurity diffusion vok. Störstellendiffusion, f rus. диффузия легирующей примеси, f pranc. diffusion d impureté dopante, f … Radioelektronikos terminų žodynas
doping mask window — legiravimo kaukės langelis statusas T sritis radioelektronika atitikmenys: angl. doping mask window vok. Diffusionsfenster, n; Diffusionsmaskenfenster, n rus. окно в маске для проведения легирования, n pranc. fenêtre de diffusion au masque, f … Radioelektronikos terminų žodynas
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
Molecular diffusion — This article is about spontaneous dispersion of mass. For a more generic treatment of diffusion, see Diffusion. Diffusion from a microscopic and macroscopic point of view. Initially, there are solute molecules on the left side of a barrier… … Wikipedia
Fick's law of diffusion — Fick s laws of diffusion describe diffusion and can be used to solve for the diffusion coefficient D . They were derived by Adolf Fick in the year 1855. First law Fick s first law relates the diffusive flux to the concentration field, by… … Wikipedia
Fick's laws of diffusion — For the technique of measuring cardiac output, see Fick principle. Molecular diffusion from a microscopic and macroscopic point of view. Initially, there are solute molecules on the left side of a barrier (purple line) and none on the right. The… … Wikipedia
fenêtre de diffusion au masque — legiravimo kaukės langelis statusas T sritis radioelektronika atitikmenys: angl. doping mask window vok. Diffusionsfenster, n; Diffusionsmaskenfenster, n rus. окно в маске для проведения легирования, n pranc. fenêtre de diffusion au masque, f … Radioelektronikos terminų žodynas